Datasheet
VS-60CPU04-F3, VS-60CPU04-N3
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Vishay Semiconductors
Revision: 17-Jul-13
4
Document Number: 93189
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Fig. 9 - Reverse Recovery Parameter Test Circuit
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
20151053025 35 40
45
0
140
160
180
100
120
93189_05
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
DC
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
35 4025155302010
45
0
93189_06
40
60
50
0
20
30
10
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
RMS limit
t
rr
(ns)
dI
F
/dt (A/μs)
100
93189_07
1000
10
1000
100
I
F
= 30 A, T
J
= 25 °C
I
F
= 30 A, T
J
= 125 °C
Q
rr
(nC)
dI
F
/dt (A/μs)
100
93189_08
1000
100
10 000
1000
I
F
= 30 A, T
J
= 25 °C
I
F
= 30 A, T
J
= 125 °C
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust