Datasheet

VS-60CPU04-F3, VS-60CPU04-N3
www.vishay.com
Vishay Semiconductors
Revision: 17-Jul-13
2
Document Number: 93189
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 37 40
ns
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 46 -
T
J
= 25 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-65-
T
J
= 125 °C - 119 -
Peak recovery current I
RRM
T
J
= 25 °C - 6.4 -
A
T
J
= 125 °C - 14.7 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 206 -
nC
T
J
= 125 °C - 874 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
- 65 - 175 °C
Thermal resistance,
junction to case per leg
R
thJC
-0.61.0
°C/W
Thermal resistance,
junction to ambient per leg
R
thJA
Typical socket mount - - 40
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased - 0.5 -
Weight
-6-g
-0.21- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-247AC 60CPU04