Datasheet

VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF, VS-60APU04-N3
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Vishay Semiconductors
Revision: 17-Jul-13
4
Document Number: 94022
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
; 
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
0204060
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
140
160
180
See note (1)
120
DC
80
80 100
Square wave (D = 0.50)
80 % rated V
R
applied
100
0 40 60 80 100
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
40
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
20
20
60
80
100
RMS limit
80
100 1000
t
rr
(ns)
dI
F
/dt (A/µs)
140
180
120
160
200
60
100
V
R
= 400 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 120 A
I
F
= 60 A
I
F
= 40 A
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
2500
1500
3500
V
R
= 400 V
T
J
= 125 °C
T
J
= 25 °C
0
500
I
F
= 40 A
I
F
= 60 A
I
F
= 120 A
3000
2000
1000