Datasheet

VS-60EPU02PbF, VS-60EPU02-N3, VS-60APU02PbF, VS-60APU02-N3
www.vishay.com
Vishay Semiconductors
Revision: 17-Jul-13
2
Document Number: 94021
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (T
C
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - - 35
nsT
J
= 25 °C
I
F
= 60 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
-28-
T
J
= 125 °C - 50 -
Peak recovery current I
RRM
T
J
= 25 °C - 4 -
A
T
J
= 125 °C - 8 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 59 -
nC
T
J
= 125 °C - 220 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case
R
thJC
- - 0.70
K/W
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth
and greased
-0.2-
Weight
-5.5- g
-0.2-oz.
Mounting torque --1.2N  m
Marking device
Case style TO-247AC modified 60EPU02
Case style TO-247AC 60APU02