Datasheet

Document Number: 93709 For technical questions, contact: [e-mail]
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Revision: 12-Sep-08 5
40TPS16 High Voltage Series
Phase Control SCR, 35 A
Vishay High Power Products
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Gate Characteristics
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
1
10
100
0.5 1 1.5 2
T = 2 5 ° C
Instantaneous On-state Current (A)
In st a nt a n e o u s O n -st a t e V o lt a g e ( V)
T = 125°C
J
4 0 TP S. . Se r i e s
J
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
Rectangular gate pulse
(4)
(3) (2) (1)
(1) PGM = 100 W, t p = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
a)Recommended load line for
b)Recommended load line for
VGD
IGD
Frequency Limited by PG(AV)
ra ted di/ dt : 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/ dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
40TPS..
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Steady State Value
(DC Operation)
Si n g l e Pu l se
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
40TPS.. Se ries
thJC
Tr a n si e n t Th e r m a l I m p e d a n c e Z ( ° C / W )