Datasheet

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Document Number: 93709
2 Revision: 12-Sep-08
40TPS16 High Voltage Series
Vishay High Power Products
Phase Control SCR, 35 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current I
T(AV)
T
C
= 79 °C, 180° conduction half sine wave 35
A
Maximum continuous RMS
on-state current as AC switch
I
T(RMS)
55
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
10 ms sine pulse, rated V
RRM
applied
Initial T
J
=
T
J
maximum
500
10 ms sine pulse, no voltage reapplied 600
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 1250
A
2
s
10 ms sine pulse, no voltage reapplied 1760
Maximum I
2
√t for fusing I
2
√t t = 0.1 to 10 ms, no voltage reapplied 12 500 A
2
√s
Low level value of threshold voltage V
T(TO)1
T
J
= 125 °C
1.02
V
High level value of threshold voltage V
T(TO)2
1.23
Low level value of on-state slope resistance r
t1
9.74
mΩ
High level value of on-state slope resistance r
t2
7.50
Maximum peak on-state voltage V
TM
110 A, T
J
= 25 °C 1.85 V
Maximum rate of rise of turned-on current dI/dt T
J
= 25 °C 100 A/µs
Maximum holding current I
H
150
mA
Maximum latching current I
L
300
Maximum reverse and direct leakage current I
RRM
/I
DRM
T
J
= 25 °C
V
R
= Rated V
RRM
/V
DRM
0.5
T
J
= 125 °C 10
Maximum rate of rise of off-state voltage dV/dt T
J
= T
J
maximum, linear to 80 % V
DRM
, R
g
-k = Open 1000 V/µs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
10
W
Maximum average gate power P
G(AV)
2.5
Maximum peak gate current I
GM
2.5 A
Maximum peak negative gate voltage - V
GM
10
V
Maximum required DC gate
voltage to trigger
V
GT
T
J
= - 40 °C
Anode supply = 6 V resistive load
4.0
T
J
= 25 °C 2.5
T
J
= 125 °C 1.7
Maximum required DC gate current to trigger I
GT
T
J
= - 40 °C 270
mA
T
J
= 25 °C 150
T
J
= 125 °C 80
T
J
= 25 °C, for 40TPS08A 40
Maximum DC gate voltage not to trigger V
GD
T
J
= 125 °C, V
DRM
= Rated value
0.25 V
Maximum DC gate current not to trigger I
GD
6mA