Datasheet

VS-40EPF1.PbF Series, VS-40EPF1.-M3 Series
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Vishay Semiconductors
Revision: 06-Feb-14
2
Document Number: 94103
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ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
40 A, T
J
= 25 °C 1.4 V
Forward slope resistance r
t
T
J
= 150 °C
6.82 m
Threshold voltage V
F(TO)
0.94 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 10
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
rr
I
F
at 10 A
pk

25 A/μs
25 °C
450 ns
Reverse recovery current I
rr
6A
Reverse recovery charge Q
rr
1.8 μC
Snap factor S 0.5
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-40 to 150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.6
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
40
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.2
Approximate weight
6g
0.21 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(Ibf · in)
maximum 12 (10)
Marking device Case style TO-247AC modified (JEDEC)
40EPF10
40EPF12
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t