Datasheet

VS-MB Series
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Vishay Semiconductors
Revision: 10-Jul-13
2
Document Number: 93563
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FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
VALUES
26MB-A
VALUES
36MB-A
UNITS
Maximum DC output current
at case temperature
I
O
Resistive or inductive load 25 35
A
Capacitive load 20 28
65 60 °C
Maximum peak, one-cycle
non-repetitive forward current
I
FSM
t = 10 ms
No voltage
reapplied
Initial 
T
J
= T
J
maximum
400 475
A
t = 8.3 ms 420 500
t = 10 ms
100 % V
RRM
reapplied
335 400
t = 8.3 ms 350 420
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
790 1130
A
2
s
t = 8.3 ms 725 1030
t = 10 ms
100 % V
RRM
reapplied
560 800
t = 8.3 ms 512 730
Maximum I
2
t for fusing I
2
tI
2
t for time t
x
= I
2
x
x
0.1  t
x
 10 ms, V
RRM
= 0 V 5.6 11.3 kA
2
s
Low level value of threshold voltage V
F(TO)1
(16.7 % x  x I
F(AV)
< I <  x I
F(AV)
), T
J
maximum 0.76 0.79
V
High level value of threshold voltage V
F(TO)2
(I >  x I
F(AV)
), T
J
maximum 0.92 0.96
Low level forward slope resistance r
t1
(16.7 % x  x I
F(AV)
< I <  x I
F(AV)
), T
J
maximum 6.8 5.8
m
High level forward slope resistance r
t2
(I >  x I
F(AV)
), T
J
maximum 5.0 4.5
Maximum forward voltage drop V
FM
T
J
= 25 °C, I
FM
= 40 A
pk
(26MB)
t
p
= 400 μs 1.11 1.14 V
T
J
= 25 °C, I
FM
= 55 A
pk
(36MB)
Maximum DC reverse current I
RRM
T
J
= 25 °C, per diode at V
RRM
10 μA
RMS isolation voltage base plate V
INS
f = 50 Hz, t = 1 s 2700 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
VALUES
26MB-A
VALUES
36MB-A
UNITS
Junction and storage temperature
range
T
J
, T
Stg
- 55 to 150 °C
Maximum thermal resistance
junction to case per bridge
R
thJC
1.7 1.2
K/W
Maximum thermal resistance, 
case to heatsink
R
thCS
Mounting surface, smooth, flat and greased 0.2
Approximate weight 20 g
Mounting torque ± 10 % Bridge to heatsink 2.0 Nm