Datasheet

VS-20L15TPbF, VS-20L15T-N3
www.vishay.com
Vishay Semiconductors
Revision: 26-Aug-11
2
Document Number: 94165
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Forward voltage drop
See fig. 1
V
FM
(1)
19 A
T
J
= 25 °C
-0.41
V
40 A - 0.52
19 A
T
J
= 125 °C
0.25 0.33
40 A 0.37 0.50
Reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
-10
mA
T
J
= 100 °C - 600
Threshold voltage V
F(TO)
T
J
= T
J
max.
0.182 V
Forward slope resistance r
t
7.6 m
Maximum junction capacitance C
T
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz) 25 °C - 2000 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 8 - nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
- 55 to 125
°C
Maximum storage temperature range T
Stg
- 50 to 150
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
1.5
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased
(for TO-220)
0.50
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation
(for D
2
PAK)
40
Approximate weight
2g
0.07 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf ·cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AC 20L15T