Datasheet

VS-20L15TPbF, VS-20L15T-N3
www.vishay.com
Vishay Semiconductors
Revision: 26-Aug-11
1
Document Number: 94165
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Schottky Rectifier, 20 A
FEATURES
125 °C T
J
operation (V
R
< 5 V)
Single diode configuration
Optimized for OR-ing applications
Ultra low forward voltage drop
Guard ring for enhanced ruggedness and long
term reliability
High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The Schottky rectifier module has been optimized for
ultra low forward voltage drop specifically for the
OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 125
°C junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
20 A
V
R
15 V
V
F
at I
F
See Electrical table
I
RM
max. 600 mA at 100 °C
T
J
max. 125 °C
Diode variation Single die
E
AS
10 mJ
Anode
1
3
Cathode
Base
cathode
2
TO-220AC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 20 A
V
RRM
15 V
I
FSM
t
p
= 5 μs sine 700 A
V
F
19 A
pk
, T
J
= 125 °C (typical) 0.25 V
T
J
Range - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-20L15TPbF VS-20L15T-N3 UNITS
Maximum DC reverse voltage V
R
15 15 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 85 °C, rectangular waveform 20
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
700
10 ms sine or 6 ms rect. pulse 330
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 6 mH 10 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2A

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