Datasheet
VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3
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Vishay Semiconductors
Revision: 26-Jul-13
3
Document Number: 94341
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Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
90
150
140
130
120
110
100
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
862 4 10 12
20
22
14 16 18
0
30°
60°
90°
120°
180°
R
thJC
(DC) = 1.3 °C/W
Conduction angle
Ø
90
150
140
130
120
110
100
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
1051520
25 30 35
0
DC
30°
60°
90°
120°
180°
R
thJC
(DC) = 1.3 °C/W
Ø
Conduction period
5
0
30
25
20
15
10
Maxiumum Average Forward
Power Loss (W)
Average Forward Current (A)
8412
24
16 20
0
RMS limit
180°
120°
90°
60°
30°
T
J
= 150 °C
Conduction angle
Ø
0
5
10
15
20
25
30
35
Maxiumum Average Forward
Power Loss (W)
Average Forward Current (A)
1051520
25
0
DC
180°
120°
90°
60°
30°
RMS limit
T
J
= 150 °C
Ø
Conduction period
50
300
250
200
150
100
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude
Half Cycle Current Pulse (N)
10
100
1
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
50
150
200
250
100
300
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
1
0.01
0.1
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied









