Datasheet

VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3
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Vishay Semiconductors
Revision: 26-Jul-13
2
Document Number: 94341
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 105 °C, 180° conduction half sine wave 20
A
Maximum peak one cycle 
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 250
10 ms sine pulse, no voltage reapplied 300
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 316
A
2
s
10 ms sine pulse, no voltage reapplied 442
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A
2
s
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
20 A, T
J
= 25 °C 1.1 V
Forward slope resistance r
t
T
J
= 150 °C
10.4 m
Threshold voltage V
F(TO)
0.85 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 40 to 150 °C
Maximum thermal resistance, 
junction to case
R
thJC
DC operation 1.3
°C/W
Typical thermal resistance, 
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.5
Approximate weight
2 g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device
Case style TO-220AC
20ETS08
20ETS12
Case style TO-220AB
20ATS08
20ATS12