Datasheet

VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3
www.vishay.com
Vishay Semiconductors
Revision: 26-Jul-13
1
Document Number: 94341
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High Voltage, Input Rectifier Diode, 20 A
FEATURES
• Very low forward voltage drop
• 150 °C max. operating junction temperature
• Designed and qualified according to
JEDEC-JESD47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
PRODUCT SUMMARY
Package TO-220AC, TO-220AB
I
F(AV)
20 A
V
R
800 V to 1200 V
V
F
at I
F
1.1 V
I
FSM
300 A
T
J
max. 150 °C
Diode variation Single die, common anode
TO-220AC
1
2
3
TO-220AB
1
2
3
1
2
3
Cathode to
ba
se
Anode Anode
VS-20ETS.. VS-20ATS..
2
13
Anode
Cathode
Base
cathode
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C 
common heatsink of 1 °C/W
16.3 21 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Sinusoidal waveform 20 A
V
RRM
800/1200 V
I
FSM
300 A
V
F
10 A, T
J
= 25 °C 1.0 V
T
J
- 40 to 150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-20ETS08PbF, VS-20ETS08-M3
VS-20ATS08PbF, VS-20ATS08-M3
800 900
1
VS-20ETS12PbF, VS-20ETS12-M3
VS-20ATS12PbF, VS-20ATS12-M3
1200 1300