Datasheet
Table Of Contents
VS-20ETF..PbF Series, VS-20ETF..-M3 Series
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Vishay Semiconductors
Revision: 26-Oct-11
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Document Number: 94098
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Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
1000
10
1
0 1.0 2.0
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
100
3.0 4.0
T
J
= 25 °C
T
J
= 150 °C
20ETF.. Series
0.5 1.5 2.5 3.5
0.7
0.5
0
0 50 100 150 200
t
rr
- Maximum Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.1
0.3
20ETF.. Series
T
J
= 25 °C
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
I
FM
= 30 A
I
FM
= 20 A
0.2
0.4
0.6
1.2
0
0 50 100 150 200
t
rr
- Maximum Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.6
0.9
0.3
20ETF.. Series
T
J
= 150 °C
I
FM
= 30 A
I
FM
= 1 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
6
0
0 50 100 150 200
Q
rr
- Maximum Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
3
1
2
4
5
20ETF.. Series
T
J
= 25 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
0
0 50 100 150 200
Q
rr
- Maximum Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
2
4
20ETF.. Series
T
J
= 150 °C
6
8
10
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
25
0
0 50 100 150 200
I
rr
- Maximum Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
5
15
10
20
20ETF.. Series
T
J
= 25 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A