Datasheet

VS-20ETF0..FPPbF Series, VS-20ETF0..FP-M3 Series
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Vishay Semiconductors
Revision: 19-Dec-13
3
Document Number: 94095
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Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Average Forward Current (A)
0 4 8 12 16 20
0
40
80
120
160
30°
20ETF.. Series
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable
Case Temperature (°C)
Maximum Allowable
Case Temperature (°C)
Average Forward Current (A)
0 5 10 15 20 25 30 35
0
50
100
150
30°
20ETF.. Series
60°
180°
DC
120°
90°
10
0
35
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
20
20
25
25
15
10 155
5
30
180°
120°
90°
60°
30°
20ETF.. Series
T
J
= 150 °C
Conduction angle
RMS limit
Ø
10
0
45
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
25
25
35
35
15
10 15
40
520
30
180°
120°
90°
60°
30°
DC
RMS limit
Ø
Conduction period
20ETF.. Series
T
J
= 150 °C
30
20
5
300
50
1 10 100
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
200
100
150
250
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
20ETF.. Series
400
150
50
0.001 0.01 1
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
300
100
200
250
350
550
Maximum non-repetitive surge current
versus pulse train duration.
20ETF.. Series
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
0.1
450
500