Datasheet

VS-20ETF0...PbF Series, VS-20ETF0...-M3 Series
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Vishay Semiconductors
Revision: 26-Jul-13
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Document Number: 94096
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Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
1000
10
1
012345
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
100
20ETF.. Series
T
J
= 25 °C
T
J
= 150 °C
0.20
0.05
0
0 200 400 600 800 1000
t
rr
- Typical Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.10
0.15
20ETF.. Series
T
J
= 25 °C
I
FM
= 1 A
I
FM
= 5 A
I
FM
= 10 A
I
FM
= 20 A
I
FM
= 30 A
0.5
0.3
0
0 200 400 600 800 1000
t
rr
- Typical Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.1
0.2
20ETF.. Series
T
J
= 150 °C
I
FM
= 30 A
I
FM
= 1 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
0.4
70
0
0 200 400 600 800 1000
I
rr
- Typical Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
30
50
40
60
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
20ETF.. Series
T
J
= 25 °C
20
10
100
60
0
0 200 400 600 800 1000
I
rr
- Typical Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
20
40
80
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
20ETF.. Series
T
J
= 150 °C