Datasheet

VS-20BQ030-M3
www.vishay.com
Vishay Semiconductors
Revision: 29-May-12
2
Document Number: 93333
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Note
(1)
Pulse width = 300 μs, duty cycle = 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2)
Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
(1)
2 A
T
J
= 25 °C
0.47
V
4 A 0.55
2 A
T
J
= 125 °C
0.37
4 A 0.47
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
R
0.5
mA
T
J
= 125 °C 15
Maximum junction capacitance C
T
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz), 25 °C 200 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and 
storage temperature range
T
J
(1)
, T
Stg
- 55 to 150 °C
Maximum thermal resistance, 
junction to lead
R
thJL
(2)
DC operation 25
°C/W
Maximum thermal resistance, 
junction to ambient
R
thJA
80
Approximate weight
0.10 g
0.003 oz.
Marking device Case style SMB (similar DO-214AA) 2E
dP
tot
dT
J
-------------
1
R
thJA
--------------<