Datasheet

VS-18TQ0..PbF Series, VS-18TQ0..-N3 Series
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Vishay Semiconductors
Revision: 11-Oct-12
2
Document Number: 94149
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
18 A
T
J
= 25 °C
0.60
V
36 A 0.72
18 A
T
J
= 125 °C
0.53
36 A 0.67
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
2.5
mA
T
J
= 125 °C 25
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 1400 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 8 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 175 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
1.50
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf in)
maximum 12 (10)
Marking device Case style TO-220AC
18TQ035
18TQ040
18TQ045