Datasheet

VS-16EDH02-M3
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Vishay Semiconductors
Revision: 20-Mar-2019
4
Document Number: 95816
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Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Fig. 9 - Reverse Recovery Waveform and Definitions
10
20
30
40
50
60
100 1000
t
rr
(ns)
dI
F
/dt (A/μs)
125 °C
25 °C
0
50
100
150
200
250
300
100 1000
Q
rr
(nC)
dI
F
/dt (A/μs)
125 °C
25 °C
Q
rr
0.5 I
RRM
di
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
di
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr