Datasheet

VS-16EDH02-M3
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Vishay Semiconductors
Revision: 20-Mar-2019
3
Document Number: 95816
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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
10
100
1000
050100150200
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
t
1
- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
DC
140
150
160
170
180
024681012141618
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
Square wave (D = 0.50)
80 % rated V
R
applied
See note
(1)
DC
0
5
10
15
20
25
0 5 10 15 20 25
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
D = 0.01
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS limit