Datasheet

VS-16EDH02-M3
www.vishay.com
Vishay Semiconductors
Revision: 20-Mar-2019
2
Document Number: 95816
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 32 -
ns
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A - - 32
T
J
= 25 °C
I
F
= 16 A,
dI
F
/dt = 200 A/μs,
V
R
= 160 V
-26-
T
J
= 125 °C - 40 -
Peak recovery current I
RRM
T
J
= 25 °C - 2.8 -
A
T
J
= 125 °C - 6 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 37 -
nC
T
J
= 125 °C - 125 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 - +175 °C
Thermal resistance,
junction to solder pad
R
thJ-Sp
-1.11.4°C/W
Approximate weight
0.55 g
0.02 oz.
Marking device Case style SMPD (TO-263AC) 16EDH02
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
I
F
- Instantaneous Forward Current (A)
V
F
- Forward Voltage Drop (V)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 175 °C
T
J
= 125 °C
0.0001
0.001
0.01
0.1
1
10
100
1000
050100150200
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 150 °C