Datasheet

VS-16CTU04PbF, VS-16CTU04-N3
www.vishay.com
Vishay Semiconductors
Revision: 26-Jun-12
4
Document Number: 94008
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
See note (1)
Square wave (D = 0.50)
Rated V
R
applied
DC
02468 1210
180
170
160
150
140
130
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
02468 1210
14
8
6
4
2
0
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
12
10
t
rr
(ns)
80
60
40
20
90
100 1000
dI
F
/dt (A/µs)
I
f
= 16 A
I
f
= 8 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
70
50
30
500
0
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
100
200
300
400
450
I
F
= 16 A
I
F
= 8 A
50
150
250
350
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C