Datasheet

VS-16CTU04PbF, VS-16CTU04-N3
www.vishay.com
Vishay Semiconductors
Revision: 26-Jun-12
2
Document Number: 94008
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μA, V
R
= 30 V - 35 60
nsT
J
= 25 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-43-
T
J
= 125 °C - 67 -
Peak recovery current I
RRM
T
J
= 25 °C - 2.8 -
A
T
J
= 125 °C - 6.3 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 60 -
nC
T
J
= 125 °C - 210 -
THERMAL MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 65 - 175 °C
Thermal resistance,
junction to case
per leg
R
thJC
-3.64
°C/W
per device - 1.8 2
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 50
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth
and greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf in)
Marking device Case style TO-220AB 16CTU04