Datasheet

VS-15ETX06PbF, VS-15ETX06-N3, VS-15ETX06FPPbF, VS-15ETX06FP-N3
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Vishay Semiconductors
Revision: 02-Jan-11
4
Document Number: 94006
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Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Fig. 8 - Forward Power Loss Characteristics
Fig. 9 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 8); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
See note (1)
Square wave (D = 0.50)
Rated V
R
applied
DC
0 5 10 15 20 25
180
170
160
150
140
130
120
110
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
Allowable Case Temperature (°C)
DC
See note (1)
Square wave (D = 0.50)
Rated V
R
applied
150
100
50
0
200
0 5 10 15 20 25
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
0
5
DC
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0 5 10 15 20 25
I
F(AV)
- Average Forward Current (A)
40
35
30
25
20
10
15
I
F
= 15 A
I
F
= 30 A
I
F
= 15 A
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
70
50
30
10
100
1000
dI
F
/dt (A/µs)
t
rr
(ns)
I
F
= 30 A
450
0
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
100
200
300
400
I
F
= 30 A
I
F
= 15 A
50
150
250
350
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C