Datasheet

VS-15ETX06PbF, VS-15ETX06-N3, VS-15ETX06FPPbF, VS-15ETX06FP-N3
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Vishay Semiconductors
Revision: 02-Jan-11
1
Document Number: 94006
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Hyperfast Rectifier, 15 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Benchmark ultralow forward voltage drop
• Low leakage current
• Fully isolated package (V
INS
= 2500 V
RMS
)
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-220AC, TO-220FP
I
F(AV)
15 A
V
R
600 V
V
F
at I
F
3.2 V
t
rr
typ. 18 ns
T
J
max. 175 °C
Diode variation Single die
TO-220AC TO-220 FULL-PA
K
Anode
1
3
Cathode
Base
cathode
2
Anode
1
3
Cathode
VS-15ETX06PbF VS-15ETX06FPPbF
VS-15ETX06-N3 VS-15ETX06FP-N3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 133 °C
15
A
T
C
= 62 °C (FULL-PAK)
Non-repetitive peak surge current I
FSM
T
J
= 25 °C 170
Peak repetitive forward current I
FM
30
Operating junction and storage temperatures T
J
, T
Stg
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 15 A - 2.3 3.2
I
F
= 15 A, T
J
= 150 °C - 1.5 1.8
Reverse leakage current I
R
V
R
= V
R
rated - 0.1 50
μA
T
J
= 150 °C, V
R
= V
R
rated - 40 300
Junction capacitance C
T
V
R
= 600 V - 20 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH