Datasheet

VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3
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Vishay Semiconductors
Revision: 02-Jan-12
4
Document Number: 94004
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Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Fig. 8 - Forward Power Loss Characteristics
Fig. 9 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 8);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
0 5 10 15 20 25
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
130
140
150
160
170
180
See note (1)
Square wave (D = 0.50)
Rated V
R
applied
DC
0 5 10 15 25
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
80
100
140
160
20
180
120
DC
Square wave (D = 0.50)
80 % rated V
R
applied
See note (1)
0 5 10 15 20 25
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
5
10
15
20
25
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
RMS limit
500
0
100 1000
t
rr
(ns)
dI
F
/dt (A/µs)
100
200
300
400
I
F
= 30 A
I
F
= 15 A
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
9000
0
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
2000
4000
6000
8000
I
F
= 30 A
I
F
= 15 A
1000
3000
5000
7000
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C