Datasheet

VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3
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Vishay Semiconductors
Revision: 02-Jan-12
2
Document Number: 94004
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Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
C
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 60 120
ns
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 190 270
T
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
-220-
T
J
= 125 °C - 320 -
Peak recovery current I
RRM
T
J
= 25 °C - 19 -
A
T
J
= 125 °C - 26 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 2.2 -
μC
T
J
= 125 °C - 4.3 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 65 - 175 °C
Thermal resistance,
junction to case
R
thJC
-1.01.3
°C/W
(FULL-PAK) - 3.0 3.5
Thermal resistance,
junction to ambient per leg
R
thJA
Typical socket mount - - 70
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth
and greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style TO-220AC 15ETL06
Case style TO-220AC FULL-PAK 15ETL06FP
100
10
1
0.4 0.6 0.8 1.0 1.2 1.6
I
F
- Instantaneous Forward
Current (A)
V
FM
- Forward Voltage Drop (V)
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
1.4
0 100 200 300 400 500 600
I
R
- Reverse Current (µA)
V
R
- Reverse Voltage (V)
0.001
0.01
0.1
1
10
100
T
J
= 100 °C
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 50 °C
T
J
= 75 °C