Datasheet

VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3
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Vishay Semiconductors
Revision: 05-Apr-12
4
Document Number: 94002
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Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Fig. 8 - Forward Power Loss Characteristics
Fig. 9 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 8);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
0 5 10 15 20 25
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
120
130
140
150
160
170
180
See note (1)
Square wave (D = 0.50)
80 % rated V
r
applied
110
DC
0 4 8 12 20 24
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
20
40
80
100
140
160
180
See note (1)
Square wave (D = 0.50)
80 % rated V
r
applied
0
DC
16
180
120
60
0 5 10 15 20 25
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
5
10
15
20
25
30
35
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
RMS limit
100
0
100 1000
t
rr
(ns)
dI
F
/dt (A/µs)
20
40
60
80
I
F
= 30 A
I
F
= 15 A
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
1000
0
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
200
400
600
800
I
F
= 30 A
I
F
= 15 A
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C