Datasheet

VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3
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Vishay Semiconductors
Revision: 05-Apr-12
2
Document Number: 94002
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
C
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 22 30
ns
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 28 35
T
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
-29-
T
J
= 125 °C - 75 -
Peak recovery current I
RRM
T
J
= 25 °C - 3.5 -
A
T
J
= 125 °C - 7 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 57 -
nC
T
J
= 125 °C - 300 -
Reverse recovery time t
rr
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 800 A/μs
V
R
= 390 V
-51-ns
Peak recovery current I
RRM
-20- A
Reverse recovery charge Q
rr
- 580 - nC
THERMAL MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 65 - 175 °C
Thermal resistance,
junction to case
R
thJC
-1.01.3
°C/W
(FULL-PAK) - 3.0 3.5
Thermal resistance,
junction to ambient per leg
R
thJA
Typical socket mount - - 70
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth
and greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style TO-220AC 15ETH06
Case style TO-220 FULL-PAK 15ETH06FP
100
10
1
0.5 1.0 1.5 2.0 2.5 3.0
I
F
- Instantaneous Forward
Current (A)
V
F
- Forward Voltage Drop (V)
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
0 100 200 300 400 500 600
I
R
- Reverse Current (µA)
V
R
- Reverse Voltage (V)
0.001
0
0.01
0.1
1
10
100
1000
T
J
= 100 °C
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C