Datasheet

VS-150EBU02
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Vishay Semiconductors
Revision: 15-Jun-11
4
Document Number: 93002
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Average Forward Current - IF
(AV)
(A)
Allowable Case Temperature (°C)
60
80
100
120
140
160
180
05010015020025
0
DC
Square wave (D = 0.50)
80% Rated Vr applied
see note (1)
Average Power Loss ( Watts )
Average Forward Current - IF
(AV)
(A)
0
50
100
150
200
250
050100150200250
DC
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
trr ( ns )
di
F
/dt (A/µs )
10
20
30
40
50
60
70
0001001
IF = 150A
IF = 75A
Vr = 160V
Tj = 125˚C
Tj = 25˚C
Qrr ( nC )
di
F
/dt (A/µs )
0
100
200
300
400
500
600
700
800
900
0001001
Vr = 160V
Tj = 125˚C
Tj = 25˚C
IF = 150A
IF = 75A