Datasheet

VS-150EBU02
www.vishay.com
Vishay Semiconductors
Revision: 15-Jun-11
2
Document Number: 93002
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - - 45
nsT
J
= 25 °C
I
F
= 150 A
V
R
= 160 V
dI
F
/dt = 200 A/μs
-34-
T
J
= 125 °C - 58 -
Peak recovery current I
RRM
T
J
= 25 °C - 4.5 -
A
T
J
= 125 °C - 9.0 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 87 -
nC
T
J
= 125 °C - 300 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case
R
thJC
- - 0.35
K/W
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased - 0.2 -
Weight
- - 5.02 g
-0.18- oz.
Mounting torque
1.2
(10)
-
2.4
(20)
N · m
(lbf · in)
Marking device Case style PowerTab
®
150EBU02