Datasheet

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, [e-mail], [e-mail] Revision: 08-Jun-10
VS-12TTS08SPbF High Voltage Series
Vishay Semiconductors
Phase Control SCR, 8 A
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
60
70
80
90
100
110
120
130
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Peak Half Sine Wa ve On-state Current (A)
Init ia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
12TTS08
50
60
70
80
90
100
110
120
130
140
150
0.01 0.1 1
Pe a k Ha lf Sin e Wa ve On-sta te Current (A)
Pu lse Tra i n Du ra ti o n (s)
Maximum Non Repetitive Surg e Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Init ia l T = 125°C
No Voltage Reapplied
Rated V Reap p lied
RRM
J
12TTS08
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5
T = 2 5° C
J
Instantaneous On-state Current (A)
In st a n t a n e o u s O n - st a t e V o l t a g e ( V )
T = 1 2 5 ° C
J
12TTS08
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
St e a d y St a t e V a l u e
(DC Operation)
Si n g l e Pu l se
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
thJC
Transient Thermal Impedance Z (°C/W)
12TTS08