Datasheet

Document Number: 94499 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 08-Jun-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
VS-12TTS08SPbF High Voltage Series
Phase Control SCR, 8 A
Vishay Semiconductors
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 40 to 125 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 1.5
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
62
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.5
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf cm
(lbf in)
maximum 12 (10)
Marking device Case style D
2
PAK (SMD-220) 12TTS08S
100
105
110
115
120
125
0246810
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduc tion Angle
Average On-state Current (A)
12TTS08
R (DC) = 1.5 K/ W
thJC
100
105
110
115
120
125
02468101214
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
12TTS08
R (DC) = 1.5 K/ W
thJC
0
1
2
3
4
5
6
7
8
9
10
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RM S Li m i t
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
12TTS08
T = 1 2 5 ° C
J
0
2
4
6
8
10
12
14
02468101214
DC
180°
120°
90°
60°
30°
RM S Li m it
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
12TTS08
T = 125°C
J