Datasheet

VS-12CWQ06FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 22-Nov-16
2
Document Number: 93289
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward
voltage drop per leg
See fig. 1
V
FM
(1)
6 A
T
J
= 25 °C
0.61
V
12 A 0.79
6 A
T
J
= 125 °C
0.57
12 A 0.72
Maximum reverse
leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
3
mA
T
J
= 125 °C 35
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.36 V
Forward slope resistance r
t
24.14 m
Typical junction capacitance per leg C
T
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz), 25 °C 360 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 5.0 nH
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage 
temperature range
T
J
(1)
, T
Stg
-55 to +150 °C
Maximum thermal resistance, 
junction to case
per leg
R
thJC
DC operation
See fig. 4
3.0
°C/W
per device 1.5
Approximate weight
0.3 g
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA) 12CWQ06FN
dP
tot
dT
J
-------------
1
R
thJA
--------------<