Datasheet

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Revision: 03-Nov-10 [e-mail]
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VS-10WQ045FN-M3
Schottky Rectifier, 10 A
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
100
10
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward
Current (A)
1
0 0.4 0.6 0.8 2.0
T
J
= 25 °C
T
J
= 175 °C
T
J
= 125 °C
0.2
1.0 1.2
1.4
1.6 1.8
1000
0.01
0.001
V
R
- Reverse Voltage (V)
Reverse Current (mA)
0
0.0001
5040
0.1
1
10 20
30
10
100
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10 000
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
100
5010
20 30
40
T
J
= 25 °C
1000
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
10
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.75
D = 0.33
D = 0.25
D = 0.20
D = 0.50