Datasheet

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, [e-mail], [e-mail] Revision: 03-Nov-10
VS-10WQ045FN-M3
Vishay Semiconductors
Schottky Rectifier, 10 A
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
10 A
T
J
= 25 °C
0.63
V
20 A 0.80
10 A
T
J
= 125 °C
0.53
20 A 0.71
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
1
mA
T
J
= 125 °C 15
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.255 V
Forward slope resistance r
t
22 m
Typical junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 760 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 5.0 nH
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
(1)
, T
Stg
- 40 to 175 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
2.0
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
50
Approximate weight
0.3 g
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA) 10WQ045FN
dP
tot
dT
J
-------------
1
R
thJA
--------------<