Datasheet

Document Number: 93284 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 03-Nov-10 [e-mail]
, [e-mail], [e-mail] 1
Schottky Rectifier, 10 A
VS-10WQ045FN-M3
Vishay Semiconductors
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Halogen-free according to IEC 61249-2-21
definition
• Popular D-PAK outline
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The VS-10WQ045FN-M3 surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
10 A
V
R
45 V
V
F
at I
F
0.53 V
I
RM
15 mA at 125 °C
T
J
max. 175 °C
Diode variation Single die
E
AS
20 mJ
Anode
1
3
Base
cathode
Anode
4, 2
D-PAK (TO-252AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 10 A
V
RRM
45 V
I
FSM
t
p
= 5 μs sine 400 A
V
F
10 Apk, T
J
= 125 °C 0.53 V
T
J
Range - 40 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10WQ045FN-M3 UNITS
Maximum DC reverse voltage V
R
45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 157 °C, rectangular waveform 10 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
400
A
10 ms sine or 6 ms rect. pulse 75
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 3 A, L = 4.4 mH 20 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
3.0 A