Datasheet

VS-10MQ100-M3
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Vishay Semiconductors
Revision: 20-Jan-15
3
Document Number: 93365
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Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
10
1
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward
Current (A)
0.1
0.4 0.6 0.8 1.0 1.61.2
1.4
T
J
= 25 °C
T
J
= 150 °C
T
J
= 125 °C
0.01
0.001
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
0
0.0001
100
0.1
20 40 60
1
80
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
0
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
10
10040
8020
60
T
J
= 25 °C
1
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
140
155
0 0.2 0.4 0.6 0.8 1.0
130
135
145
150
See note (1)
Square wave (D = 0.50)
80 % rated V
R
applied
D = 0.20
D = 0.33
D = 0.50
D = 0.75
D = 0.25
DC
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
0
0.2
0.4
0.6
0.8
0 0.4 0.8 1.2 2.0 2.4
1.6
1.6
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
1.4
1.2
1.0
t
p
- Square Wave Pulse Duration (µs)
100
I
FSM
- Non-Repetitive Surge Current (A)
10
100
1000
10 000
10
At any rated load condition and
with rated V
RRM
applied
following surge
T
J
= 25 °C