Datasheet

VS-10ETS...PbF Series, VS-10ETS...M3 Series
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Vishay Semiconductors
Revision: 26-Jul-13
2
Document Number: 94337
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Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
10 A, T
J
= 25 °C 1.1 V
Forward slope resistance r
t
T
J
= 150 °C
20 m
Threshold voltage V
F(TO)
0.82 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.05
mA
T
J
= 150 °C 0.50
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range T
J
, T
Stg
- 40 to 150 °C
Maximum thermal resistance, junction to case R
thJC
DC operation 2.5
°C/W
Maximum thermal resistance, junction to ambient 
(PCB mount)
R
thJA
62
Soldering temperature T
S
240 °C
Approximate weight
2g
0.07 oz.
Marking device Case style TO-220AC
10ETS08
10ETS12
80
90
110
100
140
150
130
120
Maximum Allowable
Case Temperature (°C)
Average Forward Current (A)
2
10
12
468
0
30°
60°
90°
120°
180°
10ETS.. Series
R
thJC
(DC) = 2.5 °C/W
Conduction angle
Ø
90
150
140
130
120
110
100
4268
16
18
10 12 14
0
Maximum Allowable
Case Temperature (°C)
Average Forward Current (A)
DC
30°
60°
90°
120°
180°
10ETS.. Series
R
thJC
(DC) = 2.5 °C/W
Ø
Conduction period