Datasheet
VS-10ETF1...FPPbF Series, VS-10ETF1...FP-M3 Series
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Vishay Semiconductors
Revision: 19-Dec-13
4
Document Number: 94093
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Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
1000
10
1
0.5 1.0 1.5 2.0 2.5 4.5
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
10ETF.. Series
T
J
= 150 °C
T
J
= 25 °C
100
4.03.0 3.5
0.6
0.3
0
0 40 80 120 160 200
t
rr
- Typical Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.1
0.2
0.5
0.4
10ETF.. Series
T
J
= 25 °C
I
FM
= 10 A
I
FM
= 1 A
I
FM
= 2 A
I
FM
= 5 A
I
FM
= 8 A
0.8
0.6
0
0 40 80 120 160 200
t
rr
- Typical Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.2
0.4
10ETF.. Series
T
J
= 150 °C
I
FM
= 8 A
I
FM
= 1 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 2 A
1.6
0
0 40 80 120 160 200
Q
rr
- Typical Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.4
0.8
1.2
I
FM
= 1 A
I
FM
= 2 A
I
FM
= 5 A
I
FM
= 10 A
I
FM
= 8 A
10ETF.. Series
T
J
= 25 °C
2.0
5
3
0
0 40 80 120 160 200
Q
rr
- Typical Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
1
2
4
10ETF.. Series
T
J
= 150 °C
I
FM
= 1 A
I
FM
= 2 A
I
FM
= 5 A
I
FM
= 10 A
I
FM
= 8 A
20
12
0
0 40 80 120 160 200
I
rr
- Typical Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
4
8
16
10ETF.. Series
T
J
= 25 °C
I
FM
= 1 A
I
FM
= 2 A
I
FM
= 5 A
I
FM
= 10 A
I
FM
= 8 A