Datasheet

VS-10ETF1...PbF Series, VS-10ETF1...-M3 Series
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Vishay Semiconductors
Revision: 26-Jul-13
2
Document Number: 94092
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ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
10 A, T
J
= 25 °C 1.33 V
Forward slope resistance r
t
T
J
= 150 °C
22.9 m
Threshold voltage V
F(TO)
0.96 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 4
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
rr
I
F
at 10 Apk
25 A/μs
25 °C
310 ns
Reverse recovery current I
rr
4.7 A
Reverse recovery charge Q
rr
1.05 μC
Typical snap factor S0.6
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 40 to 150 °C
Maximum thermal resistance 
junction to case
R
thJC
DC operation 1.5
°C/W
Maximum thermal resistance 
junction to ambient
R
thJA
62
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.5
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AC (JEDEC)
10ETF10
10ETF12