Datasheet
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4 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 31-Mar-11
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VS-10CWH02FN-M3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 5 A FRED Pt
®
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Average Forward Current - I
F
(AV)
(A)
Allowable Case Temperature (°C)
0 1 2 3 4 5 6 7 8
140
150
160
170
180
DC
see note (1)
Square wave (D=0.50)
rated Vr applied
Average Power Loss ( Watts )
Average Forward Current - IF
(AV)
(A)
012345678
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
RMS Limit
DC
trr ( nC )
di
F
/dt (A/μs )
0001001
0
5
10
15
20
25
30
35
40
5A, Tj = 25°C
5A, Tj = 125°C
Qrr ( nC )
di
F
/dt (A/μs )
0001001
0
10
20
30
40
50
60
70
5A, Tj = 25°C
5A, Tj = 125°C