Datasheet

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2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 31-Mar-11
This document is subject to change without notice.
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www.vishay.com/doc?91000
VS-10CWH02FN-M3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 5 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 23 27
nsT
J
= 25 °C
I
F
= 5 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
-21-
T
J
= 125 °C - 26 -
Peak recovery current I
RRM
T
J
= 25 °C - 2 -
A
T
J
= 125 °C - 3.1 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 20 -
nC
T
J
= 125 °C - 41 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 65 - 175 °C
Thermal resistance,
junction to case
per leg
R
thJC
-2.73.2
°C/W
per device - 1.35 1.6
Approximate weight
0.3 g
0.01 oz.
Marking device Case style D-PAK (TO-252AA) 10CWH02FN