Datasheet

VS-10BQ030-M3
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Vishay Semiconductors
Revision: 28-Aug-14
3
Document Number: 95738
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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
1000
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
10
302010
T
J
= 25 °C
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
90
100
110
120
130
0 0.4 0.8 1.2 1.6
See note (1)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
Square wave (D = 0.50)
80 % rated V
R
applied
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
0
0.2
0.4
0.5
0
0.4 0.8 1.2
1.6
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
0.1
0.3
t
p
- Square Wave Pulse Duration (µs)
100
1000
I
FSM
- Non-Repetitive Surge Current (A)
10
100
1000
10 000
10
At any rated load condition and
with rated V
RRM
applied
following surge