Datasheet

VS-10BQ030-M3
www.vishay.com
Vishay Semiconductors
Revision: 28-Aug-14
2
Document Number: 95738
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2)
Mounted 1" square PCB
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
(1)
1 A
T
J
= 25 °C
0.420
V
2 A 0.470
1 A
T
J
= 125 °C
0.300
2 A 0.370
Maximum reverse leakage current I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.5
mAT
J
= 100 °C 5.0
T
J
= 125 °C 15
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 200 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
T
J
(1)
, T
Stg
-55 to +150 °C
Maximum thermal resistance, 
junction to lead
R
thJL
(2)
DC operation 25
°C/W
Maximum thermal resistance, 
junction to ambient
R
thJA
80
Approximate weight
0.10 g
0.003 oz.
Marking device Case style SMB (similar DO-214AA) 1E
dP
tot
dT
J
-------------
1
R
thJA
--------------<
10
1
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
0
0.1
0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 125 °C
10
0.01
0.001
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
0
0.0001
3010 20
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
0.1
1