Datasheet

VS-10BQ015-M3
www.vishay.com
Vishay Semiconductors
Revision: 29-May-12
2
Document Number: 93349
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Note
(1)
Pulse width = 300 μs, duty cycle = 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2)
Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
1 A
T
J
= 25 °C
0.33
V
2 A 0.39
1 A
T
J
= 125 °C
0.21
2 A 0.29
Maximum reverse leakage current
See fig. 2
I
RM
T
J
= 25 °C
V
R
= Rated V
R
0.5
mA
T
J
= 100 °C 35
Threshold voltage V
F(TO)
T
J
= T
J
maximum
-V
Forward slope resistance r
t
-m
Typical junction capacitance C
T
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz), 25 °C 390 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
(1)
- 55 to 125
°C
Maximum storage temperature range T
Stg
- 55 to 150
Maximum thermal resistance,
junction to lead
R
thJL
(2)
DC operation
See fig. 4
36
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation 80
Approximate weight
0.10 g
0.003 oz.
Marking device Case style SMB (similar to DO-214AA) 1C
dP
tot
dT
J
-------------
1
R
thJA
--------------<