Datasheet

VS-100BGQ100
www.vishay.com
Vishay Semiconductors
Revision: 17-Jun-11
2
Document Number: 94581
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
TYP. MAX.
Forward voltage drop V
FM
(1)
50 A
T
J
= 25 °C
0.83 0.86
V
100 A 1.01 1.08
50 A
T
J
= 125 °C
0.66 0.7
100 A 0.77 0.82
Reverse leakage current I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
22 300 μA
T
J
= 125 °C 14 18 mA
Maximum junction capacitance C
T
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz) 25 °C 1320 pF
Typical series inductance L
S
Measured from tab to mounting plane 3.5 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 175 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.50
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.30
Approximate weight
5g
0.18 oz.
Mounting torque
minimum 1.2 (10)
N · m
(lbf · in)
maximum 2.4 (20)
Marking device Case style PowerTab
®
100BGQ100