Datasheet

VOS617A
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 08-Jan-14
2
Document Number: 83497
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices.
Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Forward Current vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
Power dissipation P
diss
70 mW
Surge forward current t
p
≤ 10 μs I
FSM
1.5 A
Forward current I
F
50 mA
OUTPUT
Collector emitter voltage V
CEO
80 V
Emitter collector voltage V
ECO
7V
Collector current I
C
50 mA
Power dissipation P
diss
150 mW
COUPLER
Isolation test voltage
between emitter and detector
t = 1 min V
ISO
3750 V
RMS
Total power dissipation P
tot
170 mW
Storage temperature range T
stg
-55 to +150 °C
Ambient temperature range T
amb
-55 to +110 °C
Junction temperature T
j
125 °C
Soldering temperature
(1)
t = 10 s T
sld
260 °C
0
20
40
60
80
100
120
140
160
- 25 0 25 50 75 100 125
P
diss
- Collector Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
0
10
20
30
40
50
60
- 25 0 25 50 75 100 125
I
F
- Forward Current (mA)
T
amb
- Ambient Temperature (°C)