Datasheet

VOD205T, VOD206T, VOD207T, VOD211T, VOD213T, VOD217T
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 23-Nov-12
2
Document Number: 81956
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Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices.
Fig. 1 - Power Dissipation vs. Ambient Temperature
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage t = 1 s V
ISO
4000 V
RMS
Total package dissipation ambient
(2 LEDs and 2 detectors, 2 channels)
P
tot
300 mW
Derate linearly from 25 °C 4mW/°C
Storage temperature T
stg
-40 to +150 °C
Operating temperature T
amb
-40 to +100 °C
Soldering time from 260 °C
(1)
T
sld
10 s
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
iild205t_07
200
150
100
50
0
T
A
- Ambient Temperature (°C)
Package Power Dissipation (mW)
25 50 75 100 125
total pkg
per channel
ELECTRICAL CHARACTERISTCS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 10 mA V
F
1.2 1.55 V
Reverse current V
R
= 6 V I
R
0.1 100 μA
Capacitance V
R
= 0 V C
O
25 pF
OUTPUT
Collector emitter breakdown voltage I
C
= 100 μA BV
CEO
70 V
Emitter collector breakdown voltage I
E
= 100 μA BV
ECO
7V
Collector emitter leakage current V
CE
= 10 V, I
F
= 0 A I
CEO
550nA
Collector emitter capacitance V
CE
= 0 V C
CE
10 pF
Collector emitter saturation voltage I
F
= 10 mA, I
C
= 2.5 mA V
CEsat
0.4 V
COUPLER
Capacitance (input to output) C
IO
0.5 pF