Datasheet

VO615A
www.vishay.com
Vishay Semiconductors
Rev. 2.3, 08-Feb-17
4
Document Number: 81753
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Fig. 2 - De ratin g Diagr am Fig. 3 - T est Pu ls e Di ag ram fo r Sa mp le Tes t Acco rd ing to
DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5
Fig. 4 - Test Circuit Fig. 5 - Test Circuit and Waveforms
0 25 50 75 125
0
50
100
150
200
300
T
SI
- Safety Temperature (°C)
150
100
250
Phototransistor
P
SO
(mW)
IR-diode
I
SI
(mA)
t
13930
t
1
, t
2
= 1 s to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Delay time V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω t
d
-3-μs
Rise time V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω t
r
-3-μs
Fall time V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω t
f
-4.7- μs
Storage time V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω t
s
-0.3- μs
Turn-on time V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω t
on
-6-μs
Turn-off time V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω t
off
-5-μs
Turn-on time V
S
= 5 V, I
F
= 10 mA, R
L
= 1 kΩ t
on
-3-μs
Turn-off time V
S
= 5 V, I
F
= 10 mA, R
L
= 1 kΩ t
off
-10-μs
Input
V
OUT
V
CC
= 5 V
R
L
10 %
90 %
Input pulse
Output pulse
t
r
t
on
t
f
t
off